- Išparduota
/https://libri-media.knygos-static.lt/d2e0fb0f-75af-4fde-8801-2c24feed035b/1)
- Autorius: Birte-Julia Godejohann
- Leidėjas: Fraunhofer Verlag
- Metai: 2018
- ISBN-10: 383961340X
- ISBN-13: 9783839613405
- Formatas: 14.6 x 20.6 x 1.3 cm, kieti viršeliai
- Kalba: Anglų
GaN-based High Electron Mobility Transistors with high Al-content barriers. | knygos.lt
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Aprašymas
In this work Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMT) with ultra-thin AlN barriers are developed in order to realize high-frequency transistors and power amplifiers for millimeter-wave (mmW) applications. Epitaxy and fabrication of the AlN/GaN heterostructure at the beginning of the process chain form the basis for the performance of the devices. Highly-strained and extremely thin layers complicate growth, characterization and processing of the corresponding structures.
HEMT structures, grown by plasma-assisted molecular beam epitaxy as well as metal-organic chemical vapor deposition, are systematically compared. Structural and electrical differences resulting from the substantially different epitaxial techniques could be identified and analyzed in detail.br>Process development was performed for the epitaxially optimized AlN/GaN HEMT structures at the end. Successful fabrication of devices with ultra-thin barrier layers could be demonstrated and MMICs (Monolithic Microwave Integrated Circuit) could be processed on the developed epitaxy structures for frequencies in the range of 70 - 100 GHz.
- Autorius: Birte-Julia Godejohann
- Leidėjas: Fraunhofer Verlag
- Metai: 2018
- ISBN-10: 383961340X
- ISBN-13: 9783839613405
- Formatas: 14.6 x 20.6 x 1.3 cm, kieti viršeliai
- Kalba: Anglų
In this work Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMT) with ultra-thin AlN barriers are developed in order to realize high-frequency transistors and power amplifiers for millimeter-wave (mmW) applications. Epitaxy and fabrication of the AlN/GaN heterostructure at the beginning of the process chain form the basis for the performance of the devices. Highly-strained and extremely thin layers complicate growth, characterization and processing of the corresponding structures.
HEMT structures, grown by plasma-assisted molecular beam epitaxy as well as metal-organic chemical vapor deposition, are systematically compared. Structural and electrical differences resulting from the substantially different epitaxial techniques could be identified and analyzed in detail.br>Process development was performed for the epitaxially optimized AlN/GaN HEMT structures at the end. Successful fabrication of devices with ultra-thin barrier layers could be demonstrated and MMICs (Monolithic Microwave Integrated Circuit) could be processed on the developed epitaxy structures for frequencies in the range of 70 - 100 GHz.
Atsiliepimai